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20 August 2004 Imaging properties of a leading-edge DUV laser generated photomask
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004)
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
In the recent past Deep Ultra Violet (DUV) Laser generated photomasks have gained widespread acceptance for critical and semi-critical applications in semi-conductor lithography. The advent of stable, highly capable, single-layer Chemically Amplified Resist (CAR) processes has made fabrication of this type of mask very robust in today's mask manufacturing environment. This platform affords mask makers benefits of the highly parallel architecture available in today's DUV Laser pattern generators - providing excellent cost and cycle time advantages when compared with alternative leading-edge processes using 50 KeV VSB e-beam systems. To date literature on this topic has focused mostly on characterization and optimization of DUV mask making processes. Meanwhile treatment of the resultant aerial image for critical litho applications has been largely ignored. In this paper details of the aerial image produced using DUV Laser generated photomasks will be detailed. Both 248nm and 193nm source printing with multiple types of illumination will be discussed. Details of a print test comparison performed on photomasks from two popular mask lithography platforms in use today; DUV, and 50 KeV VSB, will be documented. Finally, the most recent process improvements achieved in DUV Laser mask fabrication will be detailed. Special attention will be given to the impact of these enhancements on image quality.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Curt A. Jackson, Peter D. Buck, Sarah Cohen, Vishal Garg, Jason Hickethier, Charles H. Howard, Robert M. Kiefer, Matt J. Lamantia, John C. Manfredo, and James G. Tsou "Imaging properties of a leading-edge DUV laser generated photomask", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004);


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