20 August 2004 Investigation of quartz defect printability at the 65-nm node
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557786
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
The extension of dry-ArF optical lithography to the 65nm node imposes many challenges to photomask makers. More than likely a flavor of Alternating Aperture Phase Shift Masks (AAPSM) will be used on the most advanced lithography layers. Although the development of AAPSM masks has validated the resolution improvement, production issues are still present. Strategies for defect inspection, disposition, and repair of quartz defects at this technology node are still in development. A comprehensive strategy for the disposition and repair of quartz defects on AAPSM photomasks will be presented. The work utilizes a 65nm node, 193nm lithography based, AAPSM programmed defect mask comprised of multiple defect types at multiple quartz depths. A strong emphasis for the work is given to 60-degree phase defects. Both a Zeiss AIMSfab 193 aerial image microscope and a FEI SNP9000 scanning probe metrology tool is used to disposition the defects. The printability of defects at various illumination settings will also be reported. Repair solutions for the defects that do “print” is also presented.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric R. Poortinga, Eric R. Poortinga, Darren Taylor, Darren Taylor, } "Investigation of quartz defect printability at the 65-nm node", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557786; https://doi.org/10.1117/12.557786

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