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20 August 2004 Investigation of several materials as buffer layer candidates of EUVL mask
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557770
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
Abstract
An EUVL mask consists of a multilayer, a capping layer, a buffer layer, and an absorber layer formed on a glass substrate with a low coefficient of thermal expansion. The buffer layer protects the multilayer during the repair of absorber defects. In this study, Ru, Cr, and CrN were investigated as buffer layer candidates, and their etching selectivity with respect to a TaGeN absorber, DUV defect inspection contrast, and film stress were compared. Ru was found to be the most promising material of the three.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dongwan Kim, Yuusuke Tanaka, Hiromasa Yamanashi, and Iwao Nishiyama "Investigation of several materials as buffer layer candidates of EUVL mask", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557770
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