20 August 2004 Investigation of subpellicle defect formation at KrF lithography
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557703
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
In this study we investigated the defect due to pellicle frame materials for repeating exposure in months. Defects were found in the sub-pellicle and the defect density was high in the 4 corners compared to the center of the mask. The defects grew on MoSiON or the interface Quartz and MoSiON film, and the defect size was below 0.5 um. By analyzing with Raman Spectroscopy, defects consist of Ammonium Sulfates, Melamine Formaldade Resin and KClO3. The evaluation method for cleaning process and pellicles was Ion Chromatography. According to Ion Chromatography analysis, the main composition of defect was substances of pellicle frame materials. Also we confirmed the pellicle frame effect with the exposure test.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junsik Lee, Junsik Lee, Dong Wook Lee, Dong Wook Lee, Mun-Sik Kim, Mun-Sik Kim, Ho-Yong Jung, Ho-Yong Jung, Oscar Han, Oscar Han, } "Investigation of subpellicle defect formation at KrF lithography", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557703; https://doi.org/10.1117/12.557703

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