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20 August 2004 Linearity improvement for CD metrology with deep UV microscope
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557812
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
Abstract
Linearity improvement for critical dimension (CD) measurement of a photomask by the simulation assist (SA) method with a deep-UV microscope is proposed. In the conventional method, if the measurement pattern is resolved insufficiently with a deep-UV microscope, the CD cannot maintain linearity to the actual pattern size. In the SA method, the insufficient resolution is canceled by the actual image and the simulated image, and therefore the CD can maintain linearity even if the pattern is resolved insufficiently. The experiment result indicates that the SA method improves CD linearity of the conventional method; furthermore, it improves repeatability of hole patterns.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeshi Yamane and Takashi Hirano "Linearity improvement for CD metrology with deep UV microscope", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557812
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