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20 August 2004 Mask metrology 2D application for measurement of OPC features and corner roundness
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557808
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
Abstract
The rapid shrink of device dimensions requires reduced feature size on reticles and hence, improved CD uniformity and CD measurement precision in order to achieve tight process control. To meet this on-going trend the industry is in a quest for higher resolution metrology tools, which in-turn drives the use of SEM metrology into standard mask and manufacturing process. This paper concentrates on one specific area of Mask Metrology, being measurement of 2D (Two Dimensional) features such as contacts with sub resolution features -0 using a new SEM metrology tool, the Applied Materials' RETicleSEM. We consider the basic requirements for performing 2D measurements on a reticle as well as the algorithmic development to generalize a solution for these requirements. We consider three main requirements from such algorithm: a) It should be generic and deal with general shape features; b) It should provide new geometric metrics - such as contact area and corner roundness; c) It should measure new geometric patterns such as OPC (Optical Proximity Corrections) features and small CDs. We discuss the following issues/challenges related to the development of a generic algorithm for general shape 2D analysis: a) Limitations of the standard approach for Contacts qualification based on the Area loss measurement (Area based). b) A generic segmentation of the feature. It should be robust to noise, as well as brightness and contrast changes. c) The complexity of two dimensional general shape features metrology, especially OPC measurements. Limitations of the standard CD SEM metrology based on metrics describing simple geometric shapes such as ellipses and lines. The obtaining of new metrics can be useful as handles for advanced process control (i.e. what to measure on the 2D feature with complex shape such as contact with OPC structures).
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roman Kris, Ovadya Menadeva, Aviram Tam, Ram Peltinov, Liraz Segal, Nadav Wertsman, Naftali Shcolnik, Gidon Gottlib, and Arcadiy Vilenkin "Mask metrology 2D application for measurement of OPC features and corner roundness", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557808
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