20 August 2004 Model-based interpretation filtering for complex two-dimensional layout features
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557742
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
Complex layout features, especially two-dimensional features such as jogs and corners, are susceptible to photoresist pinching and bridging, even with the use of Optical Proximity Correction. Some of these problems arise due to improper interpretation of the design intent when determining the correction targets. These targeting problems result in excessively aggressive correction in the vicinity of two-dimensional features. Compounding the problem is the propagation of the effects of aggressive correction into 1 dimensional pattern regions, resulting in oscillatory deviations from the correction target along one-dimensional edges. Current correction processes use rules and geometric approximations based on the feature's size to generate a curved target for OPC tools to reference during correction. A new model-based methodology is proposed that will utilize significantly more pattern information as well as process information to determine how a feature should be interpreted. The model-based target construction reacts to pitch and other geometric variations within the model's influence. This targeting methodology is therefore able to predict a realistic shape for two-dimensional feature based on all pattern information within model proximity. The model-based manipulation reduces pitch and other proximity related effects for two-dimensional features, especially at more aggressive process nodes.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lawrence S. Melvin, Lawrence S. Melvin, James P. Shiely, James P. Shiely, Christopher M. Cork, Christopher M. Cork, Michael L. Rieger, Michael L. Rieger, "Model-based interpretation filtering for complex two-dimensional layout features", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557742; https://doi.org/10.1117/12.557742

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