20 August 2004 Pattern accuracy and throughput optimization for an SLM-based 248-nm DUV laser mask pattern generator
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557805
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
With each new technology generation, photomask manufacturing faces increasing complexity due to shrinking designs and accelerating use of reticle enhancement techniques. Denser and more complex patterns on the mask result in lower yields and long write and turn-around times, important factors for the rapidly increasing mask related costs in IC manufacturing. Laser pattern generators operating at DUV wavelengths were recently introduced to provide cost effective alternatives to electron-beam systems for printing of high-end photomasks. DUV wavelengths provide the required resolution and pattern fidelity. Optical tools that use raster writing principles and massively parallel printing ensure short and predictable write times for photomasks almost independent of pattern complexity. One such high-volume production system, the Sigma7300, uses spatial light modulator (SLM) technology and a 248 nm excimer laser for printing. Partially coherent imaging and multi-pass printing as in a lithography scanner further increases resolution and pattern accuracy. With four-pass printing the system provides resolution and pattern accuracy meeting mask requirements for critical layers at the 90-nm node and sub-critical layers at the 65-nm node and beyond. The paper discusses how mask layout can be optimized to take full advantage of the speed potential provided by the SLM-based writer. It shows how flexible use of the writing principle can provide cost effective writing solutions for many layers in high-end mask sets. Resolution and pattern accuracy results from the Sigma7300 will be presented together with write times for different types of designs.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Henrik Sjoberg, Henrik Sjoberg, Jean-Michel Chauvet, Jean-Michel Chauvet, Jan Harkesjo, Jan Harkesjo, Peter Hogfeldt, Peter Hogfeldt, Andrzej Karawajczyk, Andrzej Karawajczyk, Johan Karlsson, Johan Karlsson, Lars Kjellberg, Lars Kjellberg, Jonas Mahlen, Jonas Mahlen, Angela Beyerl, Angela Beyerl, Jukka Vedenpaa, Jukka Vedenpaa, Robin Goodoree, Robin Goodoree, Mans Bjuggren, Mans Bjuggren, Johan Aman, Johan Aman, } "Pattern accuracy and throughput optimization for an SLM-based 248-nm DUV laser mask pattern generator", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557805; https://doi.org/10.1117/12.557805

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