Proximity-effect correction software for EPL using the pattern classify method

Shigeki Mori; Akio Sato; Kyoji Nakajo; Masanori Shoji; Naomi Shimada; Hirokazu Sambayashi; Kenzo Goto; Fumio Murai; Hiroshi Fukuda

doi:10.1117/12.557820

20 August 2004 Proximity-effect correction software for EPL using the pattern classify method

Shigeki Mori, Akio Sato, Kyoji Nakajo, Masanori Shoji, Naomi Shimada, Hirokazu Sambayashi, Kenzo Goto, Fumio Murai, Hiroshi Fukuda

Author Affiliations +

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557820
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

In electron projection lithography (EPL), a proximity-effect was the most significant problem to critical dimension (CD) control. It was remarkable, especially when beam blur was as large as the minimum pattern size. We have developed proximity-effect correction software for EPL to solve this problem. First, this software made a correction table automatically. In this table, the optimum biases were given for various backward-scattering energy levels and beam blurs regarding all kinds of model patterns. Next, every pattern edge was classified in any of the model patterns. Then, the bias for each edge was determined taking certain proportion between the correction table bias and the previous bias. After that, pattern shape was modified. Those processes were iterated until every change in bias was less than 0.5 nm. Finally, stitching pattern features were added. This software was tested using actual 70-nm rule chip data. Errors in energy level for various kinds of patterns were better than 3 percent and line end shortening was successfully corrected. Data size expansion after the correction was about 10 percent. Processing time was about 10 hours on six PCs cluster system. In conclusion, this software provides enough CD uniformity and pattern fidelity for EPL practically. In addition, this software is applicable to not only EPL but also to EB-direct writing.

Citation Download Citation

Shigeki Mori, Akio Sato, Kyoji Nakajo, Masanori Shoji, Naomi Shimada, Hirokazu Sambayashi, Kenzo Goto, Fumio Murai, and Hiroshi Fukuda "Proximity-effect correction software for EPL using the pattern classify method", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557820

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Critical dimension metrology

Photomasks

Semiconducting wafers

Monte Carlo methods

Optical proximity correction

Projection lithography

Scattering

Show All Keywords

Keywords/Phrases

Search In:

Publication Years