Ru-capped EUVL ML mask blank performance

Pei-Yang Yan; Guojing Zhang; Eberhard Spiller; Paul B. Mirkarimi

doi:10.1117/12.557816

20 August 2004 Ru-capped EUVL ML mask blank performance

Pei-Yang Yan, Guojing Zhang, Eberhard Spiller, Paul B. Mirkarimi

Author Affiliations +

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557816
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

Using ruthenium (Ru) material as an extreme ultraviolet lithography (EUVL) mask blank multi-layer (ML) capping presents many advantages over silicon (Si) capping layer. Its high resistance to oxidation has been tested in EUVL optics. Ru capped ML mask blank also demonstrated very high etch selectivity during both mask absorber etch when the blank has no buffer layer and during buffer etch when the blank contains buffer layer. Due to higher EUV light absorption, Ru capping layer usually has to be much thinner than that of Si capping layer. As a result, long-term mask lifetime with thin Ru capping layer and its stability during multiple mask cleans becomes a concern. To address these concerns, we developed a process that improves Ru capped ML reflectivity for a given capping thickness. We further demonstrated the shelf lifetime stability of Ru capped ML mask blank and stability during multiple mask cleans. In this paper, we will discuss the detailed performance of Ru capped ML blanks, which includes mask blank reflectivity performance for different capping thickness, Ru capped ML mask blank shelf lifetime stability and cleaning stability performance. Mask patterning results using Ru capped ML blanks will also be presented.

Citation Download Citation

Pei-Yang Yan, Guojing Zhang, Eberhard Spiller, and Paul B. Mirkarimi "Ru-capped EUVL ML mask blank performance", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557816

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