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20 August 2004 Shadowing effect minimization in EUV mask by modeling
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004)
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
In Extreme Ultraviolet Lithography, the electromagnetic modeling of the mask allows to determine the influence of the mask structure on the electromagnetic field and on the aerial image. It is very useful to study the effect of the shape absorber on the CD shift. This effect, called shadowing effect, is analyzed in this paper. A simple geometrical approach to address this phenomenon is presented first. It is shown that although it can qualitatively be drawn some first orders conclusions, this over simplified view is unable to explain the complex behavior of the reflected light field. A rigorous method is still the more adapted method to assess the influence of the geometrical parameters of the features on the mask to control the CD shift on the printed resist. This study is especially focused on the absorber edges slope. It is demonstrated the choice of edge angles can minimize CD shift or keep a constant CD width.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maxime Besacier and Patrick Schiavone "Shadowing effect minimization in EUV mask by modeling", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004);


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