20 August 2004 Study of alternating phase shift mask structures for ArF lithography
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557801
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
The alternating phase-shift mask (alt. PSM) is one of the most effective approaches to improve a resolution of the 65nm logic gate structure in ArF lithography. Previously we have studied the optimization of alt. PSM in 180nm gate-pitch. In this study, we evaluated various alt. PSM in the case of 160nm gate-pitch. Using a rigorous electro-magnetic field simulation of light scattering in 3D mask topographies, we evaluated CD difference between π-phase and 0-phase space size (the π-0 CD difference), resist CD through pitch and normalized image log-slope (NILS). The parameters for our simulation were mask structure (shallow trench depth (ST), undercut size (UC), space bias, Chrome (Cr) CD, pitch, phase shift depth) and ArF exposure condition (NA, sigma, defocus). From the results of simulation, it turned out that single trench structures with UC and/or space bias showed the good intensity balance through defocus. We compared the simulation results with the AIMS fab193 (Carl Zeiss) results and found there was no large difference. The combination of UC and space bias could be chosen as suitable structure for 160nm gate-pitch.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yosuke Kojima, Yosuke Kojima, Toshio Konishi, Toshio Konishi, Jun Sasaki, Jun Sasaki, Keishi Tanaka, Keishi Tanaka, Toru Komizo, Toru Komizo, Motohiko Morita, Motohiko Morita, Masanori Shirasaki, Masanori Shirasaki, Takashi Ohshima, Takashi Ohshima, Hiroyuki Takahashi, Hiroyuki Takahashi, Kazuaki Chiba, Kazuaki Chiba, Masao Otaki, Masao Otaki, Yoshimitsu Okuda, Yoshimitsu Okuda, "Study of alternating phase shift mask structures for ArF lithography", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557801; https://doi.org/10.1117/12.557801

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