20 August 2004 Study of mask process development for EUVL
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557817
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
EUVL mask process of absorber layer dry etching and defect repair were evaluated. TaGeN and Cr were selected for absorber layer and buffer layer, respectively. These absorber layer and buffer layer were coated on 6025 Qz substrate. Two dry etching processes were evaluated for absorber layer etching. One is CF4 gas process and the other is Cl2 gas process. CD uniformity, selectivity, cross section profile and resist damage were evaluated for each process. FIB-GAE and AFM machining were applied for absorber layer repair test. XeF2 gas was used for FIB-GAE. Good selectivity between absorber layer and buffer layer was obtained using XeF2 gas. However, XeF2 gas causes side etching of TaGeN layer. AFM machining repair technique was demonstrated for TaGeN layer repair.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsukasa Abe, Tsukasa Abe, Masaharu Nishiguchi, Masaharu Nishiguchi, Tsuyoshi Amano, Tsuyoshi Amano, Toshiaki Motonaga, Toshiaki Motonaga, Shiho Sasaki, Shiho Sasaki, Hiroshi Mohri, Hiroshi Mohri, Naoya Hayashi, Naoya Hayashi, Yuusuke Tanaka, Yuusuke Tanaka, Hiromasa Yamanashi, Hiromasa Yamanashi, Iwao Nishiyama, Iwao Nishiyama, } "Study of mask process development for EUVL", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557817; https://doi.org/10.1117/12.557817


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