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20 August 2004 The study of high-speed electron beam deflection technology for VSB writers
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557759
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
Abstract
The shortening of electron beam settling time is important for the shortening of writing time of variable-shaped beam (VSB) writers. The settling time is the time until the electron beam is deflected to a desired position, and is settled. In the case of electrostatic deflector, the electron beam is deflected in proportion to the voltage to which the amount of deflections is supplied. The Digital-Analog converter and Amplifier (DAC/Amp) circuit supplies voltage required for deflector and, in order to shorten a settling time; it is necessary to accelerate operation of a DAC/Amp circuit. Especially, the amplifier operation speed should be accelerated. The performances required of amplifier are high-speed operation and high-voltage operation. The key technology for high speed and high voltage operation of amplifier is the development of high speed, high voltage operation transistor. Although these two performances are the relation of a trade-off, the transistor that has attained our required performances dose not exists. For this reason, we started from joint development of the transistor, which had attained the required performances. Furthermore, we developed the trial peace amplifier using the developed transistor and evaluated. In addition to these results, we will also report the result of the throughput evaluation using the pattern for supposing the 65nm node device pattern.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junji Hirumi, Nobuyuki Yoshioka, Hiromichi Hoshi, Hiroyoshi Ando, Seiichi Tsuchiya, and Morihisa Hoga "The study of high-speed electron beam deflection technology for VSB writers", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557759
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