The study of phase angle effects to wafer process window using 193-nm EAPSM in a 300-mm wafer manufacturing environment

William Y. Chou; Shih Ming Yen; J. K. Wu; W. B. Shieh; Mars Chuang; George Fan; Chin Chih Tseng; Gregory P. Hughes; Susan S. MacDonald; Carrie Holiday; Gong Chen

doi:10.1117/12.557754

20 August 2004 The study of phase angle effects to wafer process window using 193-nm EAPSM in a 300-mm wafer manufacturing environment

William Y. Chou, Shih Ming Yen, J. K. Wu, W. B. Shieh, Mars Chuang, George Fan, Chin Chih Tseng, Gregory P. Hughes, Susan S. MacDonald, Carrie Holiday, Gong Chen

Author Affiliations +

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557754
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

As the semiconductor-process technology advances towards the 90nm-node, more and more wafer-fabs start to use 193nm EAPSM (Embedded Attenuated Phase-Shift Mask) technology as the main lithography strategy for the most critical-layers. Because the 193nm EAPSM is a relative new technology in the semiconductor industry, it is important for us to understand the key-mask-specifications in a 193nm EAPSM and their impact to the wafer process windows. In this paper, we studied the effects of phase-angle and transmission to the wafer process window of a 193nm-EAPSM in a 300mm wafer-manufacturing environment. We first fabricated a special multi-phase EAPSM by a combination of extra Quartz-etch and Mosi-removal. We then used a high NA 193nm scanner (ASML-ALTA1100) and high contrast resist to perform the wafer-level printing study. To fully understand the impact of phase-angle and transmission to wafer process windows, we also used AIMS (Aerial-Image Measurement System) and Prolith simulation software to study the lithographic performances of various phase-angle and transmission combinations. By combining the wafer-level resist imaging printing results, AIMS studies and Prolith-2 lithography simulations, we proposed the practical phase-angle and transmission specifications for the 90nm-node wafer process.

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William Y. Chou, Shih Ming Yen, J. K. Wu, W. B. Shieh, Mars Chuang, George Fan, Chin Chih Tseng, Gregory P. Hughes, Susan S. MacDonald, Carrie Holiday, and Gong Chen "The study of phase angle effects to wafer process window using 193-nm EAPSM in a 300-mm wafer manufacturing environment", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557754

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KEYWORDS

Semiconducting wafers

Lithography

Photomasks

Printing

Etching

Quartz

Wafer manufacturing

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