Compact electron-based EUV source for at-wavelength metrology

Andre Egbert; Boris Tkachenko; Stefan Becker; Boris N. Chichkov

doi:10.1117/12.547029

20 September 2004 Compact electron-based EUV source for at-wavelength metrology

Andre Egbert, Boris Tkachenko, Stefan Becker, Boris N. Chichkov

Proceedings Volume 5448, High-Power Laser Ablation V; (2004) https://doi.org/10.1117/12.547029
Event: High-Power Laser Ablation, 2004, Taos, New Mexico, United States

Abstract

A compact electron-based extreme ultraviolet (EUV) source for at-wavelength metrology is developed. The source concept is based on the transfer of advanced microfocus x-ray tube technology into the EUV spectral range. This allows the realization of a flexible, debris-free, and long-term stable EUV source. In the EUV tube, silicon targets are used to generate radiation at 13.5 nm. Detailed characteristics of the source performance are reported and different applications of the EUV tube in the field of at-wavelength metrology are presented.

Citation Download Citation

Andre Egbert, Boris Tkachenko, Stefan Becker, and Boris N. Chichkov "Compact electron-based EUV source for at-wavelength metrology", Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); https://doi.org/10.1117/12.547029

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