20 September 2004 Compact electron-based EUV source for at-wavelength metrology
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Proceedings Volume 5448, High-Power Laser Ablation V; (2004) https://doi.org/10.1117/12.547029
Event: High-Power Laser Ablation, 2004, Taos, New Mexico, United States
A compact electron-based extreme ultraviolet (EUV) source for at-wavelength metrology is developed. The source concept is based on the transfer of advanced microfocus x-ray tube technology into the EUV spectral range. This allows the realization of a flexible, debris-free, and long-term stable EUV source. In the EUV tube, silicon targets are used to generate radiation at 13.5 nm. Detailed characteristics of the source performance are reported and different applications of the EUV tube in the field of at-wavelength metrology are presented.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andre Egbert, Andre Egbert, Boris Tkachenko, Boris Tkachenko, Stefan Becker, Stefan Becker, Boris N. Chichkov, Boris N. Chichkov, } "Compact electron-based EUV source for at-wavelength metrology", Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); doi: 10.1117/12.547029; https://doi.org/10.1117/12.547029


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