Emission characteristics of EUV light source by CO2 laser-produced Xe and Sn plasma

Hiroki Tanaka; Kouzi Akinaga; Akihiko Takahashi; Tatsuo Okada

doi:10.1117/12.547372

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20 September 2004 Emission characteristics of EUV light source by CO₂ laser-produced Xe and Sn plasma

Hiroki Tanaka, Kouzi Akinaga, Akihiko Takahashi, Tatsuo Okada

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Proceedings Volume 5448, High-Power Laser Ablation V; (2004) https://doi.org/10.1117/12.547372
Event: High-Power Laser Ablation, 2004, Taos, New Mexico, United States

Abstract

We propose CO₂ laser-produced plasma as the extreme ultraviolet (EUV) light source for future optical lithography. The laser beam from a transversely-excited atmospheric (TEA) CO₂ laser (4 J, 50 ns FWHM) was focused on a Xe gas target, a Xe cryogenic target and a nano-structured tin-based target to generate EUV radiation around 13.5 nm. The EUV pulse of about 100 ns in FWHM was measured 50 ns after the CO₂ laser irradiation. The EUV spectra were measured by an X-ray CCD camera with a transmission grating spectrograph (TGS). A characteristic EUV spectrum was observed from CO₂ laser produced Xe plasma. The EUV energy was measured by a Flying Circus II detecting system and an output energy of 3 mJ/pulse and a conversion efficiency of 0.2% per 2π sr at 13.5 nm (2% B.W.) were obtained with Xe targets. These values are comparable to those of YAG laser-produced Xe plasma, indicating the potential scalability of the EUV light source using a CO₂ laser produced plasma.

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Hiroki Tanaka, Kouzi Akinaga, Akihiko Takahashi, and Tatsuo Okada "Emission characteristics of EUV light source by CO₂ laser-produced Xe and Sn plasma", Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); https://doi.org/10.1117/12.547372

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