Translator Disclaimer
Paper
20 September 2004 High-power laser plasma EUV light source for lithography
Author Affiliations +
Proceedings Volume 5448, High-Power Laser Ablation V; (2004) https://doi.org/10.1117/12.548011
Event: High-Power Laser Ablation, 2004, Taos, New Mexico, United States
Abstract
The main technological challenge of a future extreme ultraviolet (EUV) light source is the required average power of 115 W at the intermediate focus. High repetition rate laser produced plasma (LPP) sources are very promising to face this challenge. We report the current status of the laser produced light source system we started to develop in 2002. The system consists of the following main components: The plasma target is a liquid xenon jet wih a maximum diameter of 50 micrometer and a velocity of more than 30 m/s. A Nd:YAG laser oscillating at 1064 nm produces the plasma. The laser is a master oscillator power amplifier (MOPA) configuration with a maximum repetition rate of 10 kHz and an average power of 1 kW. The EUV system currently delivers an average EUV in-band power of 4 W (2% bandwidth, 2π sr) having a stability of 0.54% (1σ, 50-pulse moving average). Related to future collector mirror lifetime considerations, a magnetic confinement scheme is evaluated for fast ions mitigation.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Endo "High-power laser plasma EUV light source for lithography", Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); https://doi.org/10.1117/12.548011
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Performance of new high-power HVM LPP-EUV source
Proceedings of SPIE (March 18 2016)
Small field exposure tool (SFET) light source
Proceedings of SPIE (March 21 2007)
Magnetic field ion mitigation for EUV light sources
Proceedings of SPIE (May 06 2005)
EUV light source development in Japan
Proceedings of SPIE (November 18 2003)

Back to Top