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20 September 2004 Measurements of energy distribution functions of xenon ions from laser-produced plasmas for lithography
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Proceedings Volume 5448, High-Power Laser Ablation V; (2004) https://doi.org/10.1117/12.545933
Event: High-Power Laser Ablation, 2004, Taos, New Mexico, United States
Abstract
The collector mirror lifetime of a future extreme ultraviolet lithography light source system is an important development issue. Beside vacuum cleanliness and heat load, fast ions are especially critical in case of laser-produced plasmas causing quick degradation of the multilayer structure of near normal incidence collector mirrors. We are currently developing a light source system based on a laser-produced plasma for next generation lithography. The plasma target is a liquid xenon jet. Energy distributions of fast xenon ions from the laser-produced plasma have been measured by time-of-flight (TOF) experiments. Two low repetition rate Nd:YAG lasers at 1064 nm with pulse lengths of 8 ns and 150 ps have been used for plasma generation and mean ion energies of 3 keV and 7 keV have been measured, respectively. In addition, the effects of fast ions on Mo/Si multilayer mirrors have been studied using a Xe ion gun. Ion sputtering of the multilayer structure is the main damage mechanism but boundary layer mixing and increased surface roughness are also observed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Georg Soumagne, Tamotsu Abe, Hiroshi Komori, Hiroshi Someya, Takashi Suganuma, and Akira Endo "Measurements of energy distribution functions of xenon ions from laser-produced plasmas for lithography", Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); https://doi.org/10.1117/12.545933
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