Scaling laws of subpicosecond laser-induced breakdown in dielectric films (Poster Award Paper)

Mark Mero; Jianhua Liu; Wolfgang G. Rudolph

doi:10.1117/12.577602

20 September 2004 Scaling laws of subpicosecond laser-induced breakdown in dielectric films (Poster Award Paper)

Mark Mero, Jianhua Liu, Wolfgang G. Rudolph

Proceedings Volume 5448, High-Power Laser Ablation V; (2004) https://doi.org/10.1117/12.577602
Event: High-Power Laser Ablation, 2004, Taos, New Mexico, United States

Abstract

The scaling of the laser fluence for dielectric breakdown with respect to pulse duration and material bandgap was investigated in the sub-ps regime using various oxide films (TiO₂, Ta₂O₅, HfO₂, Al₂O₃, and SiO₂). A phenomenological model attributes the pulse duration dependence to the interplay of multiphoton ionization, impact ionization, and sub-ps electron decay out of the conduction band. The observed linear scaling of the breakdown fluence with bandgap, which is nearly independent of the pulse duration, can be explained within the framework of our model by invoking the bandgap dependence of the multi-photon absorption coefficient from Keldysh photoionization theory.

Citation Download Citation

Mark Mero, Jianhua Liu, and Wolfgang G. Rudolph "Scaling laws of subpicosecond laser-induced breakdown in dielectric films (Poster Award Paper)", Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); https://doi.org/10.1117/12.577602

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