20 September 2004 Ultraviolet femtosecond and nanosecond laser ablation of silicon: ablation efficiency and laser-induced plasma expansion
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Proceedings Volume 5448, High-Power Laser Ablation V; (2004) https://doi.org/10.1117/12.544401
Event: High-Power Laser Ablation, 2004, Taos, New Mexico, United States
Abstract
Femtosecond laser ablation of silicon in air was studied and compared with nanosecond laser ablation at ultraviolet wavelength (266 nm). Laser ablation efficiency was studied by measuring crater depth as a function of pulse number. For the same number of laser pulses, the fs-ablated crater was about two times deeper than the ns-crater. The temperature and electron number density of the pulsed laser-induced plasma were determined from spectroscopic measurements. The electron number density and temperature of fs-pulse plasmas decreased faster than ns-pulse plasmas due to different energy deposition mechanisms. Images of the laser-induced plasma were obtained with femtosecond time-resolved laser shadowgraph imaging. Plasma expansion in both the perpendicular and the lateral directions to the laser beam were compared for femtosecond and nanosecond laser ablation.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xianzhong Joe Zeng, Xianglei Mao, Ralph Greif, Richard E. Russo, "Ultraviolet femtosecond and nanosecond laser ablation of silicon: ablation efficiency and laser-induced plasma expansion", Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); doi: 10.1117/12.544401; https://doi.org/10.1117/12.544401
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