17 GHz Direct Modulation Bandwidth and Impedance Characteristics of Vapor Phase Regrown 1.3 µm InGaAsP Buried Heterostructure Lasers

C. B. Su; V. Lanzisera; W. Powazinik; E. Meland; J. Schlafer; R. Olshansky; R. B. Lauer

doi:10.1117/12.948331

28 October 1985 17 GHz Direct Modulation Bandwidth and Impedance Characteristics of Vapor Phase Regrown 1.3 µm InGaAsP Buried Heterostructure Lasers

C. B. Su, V. Lanzisera, W. Powazinik, E. Meland, J. Schlafer, R. Olshansky, R. B. Lauer

Author Affiliations +

Proceedings Volume 0545, Optical Technology for Microwave Applications II; (1985) https://doi.org/10.1117/12.948331
Event: 1985 Technical Symposium East, 1985, Arlington, United States

Abstract

A record room temperature small-signal modulation bandwidth of 17 GHz is reported for vapor phase regrown 1.3 μm InGaAsP buried heterostructure (BH) lasers operated at a pulse bias optical power of only 12 mW/facet. Under cw bias conditions a band-width of 12 GHz is achieved. The optical modulation amplitude remains flat in sharp contrast to other types of BH lasers which exhibit strong signal roll-off at frequencies well below the resonance frequency. The modulation bandwidth is attained by increasing the p-doping level in the active region and by the choice of short cavity length. The device is grown on a conductive substrate indicating that it is unnecessary to use a semi-insulating substrate to obtain flat optical response in these vapor phase regrown BH lasers.

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C. B. Su, V. Lanzisera, W. Powazinik, E. Meland, J. Schlafer, R. Olshansky, and R. B. Lauer "17 GHz Direct Modulation Bandwidth and Impedance Characteristics of Vapor Phase Regrown 1.3 µm InGaAsP Buried Heterostructure Lasers", Proc. SPIE 0545, Optical Technology for Microwave Applications II, (28 October 1985); https://doi.org/10.1117/12.948331

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