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15 September 2004 Enhancement of second harmonic in one-dimensional and two-dimensional epitaxial GaN-based photonic crystals
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The second-harmonic field generated has been measured in reflection from the surface of one-dimensional and two-dimensional photonic crystals etched into a GaN layer. A very large second-harmonic enhancement is observed when simultaneously the incident beam at the fundamental frequency w excites a resonant Bloch mode and the second-harmonic field generated is coupled into a resonant Bloch mode at 2w. A smaller, but still substantially enhanced, second-harmonic generation level was also observed when the fundamental field was coupled into a resonant mode, while the second-harmonic field was not. By using calculated and experimental equifrequency surfaces, it is possible to identify the geometrical configurations that will allow quasi-phase matching to be satisfied - and observed experimentally in the available wavelength tuning range of the laser. The extended transparency window of III-nitride wide-bandgap semiconductors, coupled with large non linearities, is an appealing feature pointing towards the control and manipulation of light in photonic structures.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeremi Torres, Gabriele Vecchi, Dominique Coquillat, Andrea Marco Malvezzi, Rene Legros, Jean Paul Lascaray, David Peyrade, Yong Chen, Marine Le Vassor d'Yerville, Emmanuel Centeno, David Cassagne, J. P. Albert, and Richard M. De La Rue "Enhancement of second harmonic in one-dimensional and two-dimensional epitaxial GaN-based photonic crystals", Proc. SPIE 5450, Photonic Crystal Materials and Nanostructures, (15 September 2004); doi: 10.1117/12.545563;

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