15 September 2004 UV luminescence of ZnO infiltrated in opal matrix
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Abstract
ZnO infiltration technology was developed by chemical deposition from solution in to a three-dimensional opal lattice, samples of the ZnO - opal composites were prepared with the predominating UV - emission at room temperature. The embedding degree was checked up by the sample weight and by the shift of the spectral position of the reflection maximum (stop band). The both ways were in accordance with one another. The optimal synthesis conditions of the ZnO-filled opals were defined for the maximal intensity of the UV-luminescence. It is shown the use of the "raw" opals and incomplete filling of the pores by semiconducting material increase the edge excitonic emission by several times at room temperature. Angular dependences of the photoluminescence and reflectance spectra of the ZnO-infiltrated opal have been studied. These results can be used to create effective laser light sources in UV spectral range using "photonic crystal" effect.
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Gennadi A. Emelchenko, Vladimir Masalov, Eduard Samarov, Alexander Grusintsev, Eugeny Yakimov, Gennadi Volkodav, Igor Karpov, Anatolii Bazhenov, Sergei Bozhko, "UV luminescence of ZnO infiltrated in opal matrix", Proc. SPIE 5450, Photonic Crystal Materials and Nanostructures, (15 September 2004); doi: 10.1117/12.545377; https://doi.org/10.1117/12.545377
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