18 August 2004 Integrated 1.3-μm InGaAlAs-InP laser-modulator with double-stack MQW layer structure
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Proceedings Volume 5451, Integrated Optics and Photonic Integrated Circuits; (2004); doi: 10.1117/12.544610
Event: Photonics Europe, 2004, Strasbourg, France
Abstract
We present first experimental results of the successful transfer of our monolithic integrated double-stack multi quantum well laser-modulator approach from the traditional InGaAsP/InP to the more promising InGaAlAs/InP material system. In continuous wave operation at room temperature, the devices achieved threshold currents of <21 mA, fiber coupled optical power levels up to 570 μW and static extinction ratios in the range of 15 dB/V. The measured small-signal modulation bandwidth of about 10 GHz is capacitance limited due to a conservative device layout.
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Thomas Knodl, Christian Hanke, Brem Kumar Saravanan, Martin Peschke, Rupert Schreiner, Bernhard Stegmuller, "Integrated 1.3-μm InGaAlAs-InP laser-modulator with double-stack MQW layer structure", Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); doi: 10.1117/12.544610; https://doi.org/10.1117/12.544610
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KEYWORDS
Modulators

Absorption

Modulation

Waveguides

Quantum wells

Capacitance

Continuous wave operation

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