Optical characterization of 1-GHz silicon-based optical modulator

Richard Jones; Ling Liao; Ansheng Liu; Mike S. Salib; Doron Rubin; Oded Cohen; Dean A. Samara-Rubio; Mario J. Paniccia

doi:10.1117/12.565628

18 August 2004 Optical characterization of 1-GHz silicon-based optical modulator

Richard Jones, Ling Liao, Ansheng Liu, Mike S. Salib, Doron Rubin, Oded Cohen, Dean A. Samara-Rubio, Mario J. Paniccia

Proceedings Volume 5451, Integrated Optics and Photonic Integrated Circuits; (2004) https://doi.org/10.1117/12.565628
Event: Photonics Europe, 2004, Strasbourg, France

Abstract

In this paper the optical characterization of a novel, metal-oxide-silicon (MOS) capacitor-based, high speed, silicon optical modulator is presented. By using a capacitor based rather than the conventional p-i-n junction based architecture to modulate the free carrier density inside the waveguide, we show the realization of a fast, 2.5-GHz, optical modulator.

Citation Download Citation

Richard Jones, Ling Liao, Ansheng Liu, Mike S. Salib, Doron Rubin, Oded Cohen, Dean A. Samara-Rubio, and Mario J. Paniccia "Optical characterization of 1-GHz silicon-based optical modulator", Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); https://doi.org/10.1117/12.565628

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