18 August 2004 Photosensitivity of boron-codoped PECVD films in application to grating-assisted WDM devices
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Abstract
UV sensitivity of B-Ge codoped cores in PECVD silica waveguides has been investigated. Photoinduced refractive index changes have been introduced by KrF excimer laser irradiation at 248 nm, without any presensitization method. The effects of B codoping of Ge doped silica have been examined. It has been shown that B addition mildly increases glass network disorder, by broadening the O bridging angle distribution as from FTIR measurements, but on the other hand it does not produce point defects which may contribute to the absorption band at 5eV already generated by the presence of Ge doping. The fabricated channel waveguides show low optical loss even without high temperature annealing. Strong Bragg gratings imprinted into these waveguides confirm that in non thermally annealed Ge doped PECVD silica glass, where a small absorption band still exist at 5eV, B codoping supplies sufficient photosensitivity amplification to make hydrogen loading unnecessary.
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Matteo Dainese, Lech Wosinski, Marcin Swillo, "Photosensitivity of boron-codoped PECVD films in application to grating-assisted WDM devices", Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); doi: 10.1117/12.545813; https://doi.org/10.1117/12.545813
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