Plasma-enhanced chemical vapor deposition of low- loss as-grown germanosilicate layers for optical waveguides

Feridun Ay; Sedat Agan; Atilla Aydinli

doi:10.1117/12.546080

18 August 2004 Plasma-enhanced chemical vapor deposition of low- loss as-grown germanosilicate layers for optical waveguides

Feridun Ay, Sedat Agan, Atilla Aydinli

Author Affiliations +

Proceedings Volume 5451, Integrated Optics and Photonic Integrated Circuits; (2004) https://doi.org/10.1117/12.546080
Event: Photonics Europe, 2004, Strasbourg, France

Abstract

We report on systematic growth and characterization of low-loss germanosilicate layers for use in optical waveguides. Plasma enhanced chemical vapor deposition (PECVD) technique was used to grow the films using silane, germane and nitrous oxide as precursor gases. Chemical composition was monitored by Fourier transform infrared (FTIR) spectroscopy. N-H bond concentration of the films decreased from 0.43x10²² cm^-3 down to below 0.06x10²² cm^-3, by a factor of seven as the GeH4 flow rate increased from 0 to 70 sccm. A simultaneous decrease of O-H related bonds was also observed by a factor of 10 in the same germane flow range. The measured TE rate increased from 5 to 50 sccm, respectively. In contrast, the propagation loss values for TE polarization at λ=632.8 nm were found to increase from are 0.20 ± 0.02 to 6.46 ± 0.04 dB/cm as the germane flow rate increased from 5 to 50 sccm, respectively. In contrast, the propagation loss values for TE polarization at λ=1550 nm were found to decrease from 0.32 ± 0.03 down to 0.14 ± 0.06 dB/cm for the same samples leading to the lowest values reported so far in the literature, eliminating the need for high temperature annealing as is usually done for these materials to be used in waveguide devices.

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Feridun Ay, Sedat Agan, and Atilla Aydinli "Plasma-enhanced chemical vapor deposition of low- loss as-grown germanosilicate layers for optical waveguides", Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); https://doi.org/10.1117/12.546080

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KEYWORDS

Waveguides

FT-IR spectroscopy

Plasma enhanced chemical vapor deposition

Wave propagation

Absorption

Silicon

Germanium

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