1 September 2004 Dynamics of laterally coupled semiconductor lasers: transition to chaos
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Proceedings Volume 5452, Semiconductor Lasers and Laser Dynamics; (2004); doi: 10.1117/12.545434
Event: Photonics Europe, 2004, Strasbourg, France
Abstract
A method for the investigation of the dynamics of two semiconductor lasers, grown side-by-side on the same wafer to enhance the lateral optical coupling, is presented. Using steady state analysis, parameter regimes of relevant dynamics are identified. This is completed by a spectral analysis, were two routes to chaos are implicated. Finally, we confirm the calculations by showing an avoided crossing type of behavior for the coupling strength.
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Mirvais Yousefi, Alberto Barsella, Daan Lenstra, "Dynamics of laterally coupled semiconductor lasers: transition to chaos", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545434; https://doi.org/10.1117/12.545434
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KEYWORDS
Semiconductor lasers

Chaos

Digital Light Processing

Laser marking

Semiconducting wafers

Wafer-level optics

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