1 September 2004 Investigation of p-type doping effect on the gain characteristics of quantum dash semiconductor lasers
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InP based quantum dash active materials have been recently presented in the literature for their promising emission characteristics in the 1.55 μm wavelength range and for their broadband emission spectrum, that makes them interesting candidates as active material of semiconductor optical amplifiers and widely tunable lasers. The effect of p-type modulation doping in quantum well and quantum dot semiconductor active materials has been extensively studied in the literature as a technological possibility to increase the differential gain and the modulation bandwidth of semiconductor lasers, but, to our knowledge, it has never been considered for quantum dash lasers. In this work the effect of p-type modulation doping in a quantum-dash active material is theoretically analyzed, using a quasi-equilibrium model that accounts for the carrier distribution in the dashes of the ensemble, in the wetting-layer and in the barriers. We will show that the carrier distribution in these states significantly influences the efficacy of p-type modulation doping.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mariangela Gioannini, Mariangela Gioannini, } "Investigation of p-type doping effect on the gain characteristics of quantum dash semiconductor lasers", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545989; https://doi.org/10.1117/12.545989


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