1 September 2004 Linewidth enhancement factor and modulation bandwidth of lattice-matched 1.5 micron InGaAsN/GaAs quantum well lasers
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Abstract
The linewidth enhancement factors of lattice-matched 1.5 μm wavelength InGaNAs/GaAs and InGaAs/InP single-quantum-well structures have been calculated using microscopic theory including many-body effects and a 10x10 effective-mass Hamiltonian. For applications which require high gain and carrier densities, InGaNAs/GaAs quantum wells have a much lower linewidth enhancement factor over a temperature range 300-400 K than InGaAs. The linewidth enhancement factor of InGaNAs is almost independent of both carrier density and temperature compared with InGaAs. The small-signal modulation characteristics of these 1.5μm lattice-matched structures and their temperature dependence have also been calculated. It is found that the maximum bandwidth of the InGaNAs/GaAs quantum well lasers is about 2.3 times larger than that of the InGaAs/InP quantum well lasers due to the high differential gain. The slope efficiency for the 3dB bandwidth as a function of optical density is twice as large for InGaNAs/GaAs as for InGaAs/InP quantum well lasers.
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Woon-Ho Seo, Woon-Ho Seo, Canice O'Brien, Canice O'Brien, John F. Donegan, John F. Donegan, Yoonseok Lee, Yoonseok Lee, Gil-Ho Kim, Gil-Ho Kim, } "Linewidth enhancement factor and modulation bandwidth of lattice-matched 1.5 micron InGaAsN/GaAs quantum well lasers", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545877; https://doi.org/10.1117/12.545877
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