Translator Disclaimer
1 September 2004 Mode locking of InGaAs quantum dot lasers
Author Affiliations +
Extensive mode-locking investigations are performed in InGaAs/InAs/GaAs quantum dot (QD) lasers. Monolithic mode-locked lasers are fabricated using QD material systems grown by MOCVD and MBE techniques and emitting at 1.1μm and 1.3μm, respectively. The mode-locking performance is evaluated using a variety of laser designs, with various ridge waveguide geometries, cavity and absorber lengths. Passive and hybrid mode-locking are studied and compared in 3.9mm long devices emitting at 1.1μm and operating at a repetition rate of 10GHz. Using 2.1mm long devices emitting at 1.3μm, 18GHz passive mode locking with 10ps Fourier transform limited pulses is demonstrated. This confirms the potential of quantum dot laser for low chirp, short optical pulse generation. Preliminary investigation of the timing jitter of QD passively mode-locked lasers and the behaviour of the QD absorber are also presented. Finally, we report 36GHz passive mode-locking with 6ps optical pulse obtained using 1.1mm long QD lasers emitting at 1.3μm.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.


Towards a photonic crystal mode-locked laser
Proceedings of SPIE (March 04 2013)
Monolithic mode-locked quantum dot lasers
Proceedings of SPIE (January 29 2008)
Progress in semiconductor ring lasers
Proceedings of SPIE (March 17 1995)
High-frequency nanophotonic devices
Proceedings of SPIE (February 08 2007)

Back to Top