1 September 2004 Modeling and cavity optimization of an external cavity semiconductor laser
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Abstract
Semiconductor external cavity lasers (ECL) have a wide range of applications in the field of DWDM and measurement systems. One of their most important features is the continuous tuning without mode hopping in a wide wavelength range. In this paper we present a modelling approach for an ECL in Littman-Metcalf configuration carried out for optimising: 1) the laser diode position inside the cavity in order to maximize the range of continuous wavelength tuning without mode hopping and without cavity-length adjustment and 2) the choice of the detuning of the operating wavelength respect to the Bragg condition in order to minimize the four-wave mixing (FWM) effects and the effect of a non-perfect antireflection coating (ARC). A realistic example has been analyzed and therefore we considered: the wavelength dependence of the modal gain, linewidth enhancement factor and grating selectivity, as well as the modal refractive index change with carrier injection, operating wavelength and temperature. The implemented numerical tools allow also to obtain some specifications on the grating selectivity and the ARC design.
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Valentin I. Feies, Valentin I. Feies, Ivo Montrosset, Ivo Montrosset, "Modeling and cavity optimization of an external cavity semiconductor laser", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545634; https://doi.org/10.1117/12.545634
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