1 September 2004 Tunneling regenerated high-power dual-wavelength laser diodes
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A Novel structure of high power dual-wavelength semiconductor laser diode is proposed and fabricated. Two laser structures are cascaded by a high doping tunnel junction during the epitaxial growth. The lasers can emit at wavelength of 951nm and 987nm at the same time. Without facet coating, the output power of the dual-wavelength laser is as high as 3.1W at 3A. And the slope efficiency of these devices is about 1.21A/W. Much higher output power can be reached for those dual-wavelength lasers when modifying the structure. The external differential quantum efficiency of different cavity length devices is analyzed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Ling Guo, Wei Ling Guo, Guang Di Shen, Guang Di Shen, Jian Jun Li, Jian Jun Li, Ting Wang, Ting Wang, Guo Gao, Guo Gao, Deshu Zou, Deshu Zou, } "Tunneling regenerated high-power dual-wavelength laser diodes", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545944; https://doi.org/10.1117/12.545944


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