8 September 2004 Design of a SiGe/Si quantum well optical modulator integrated in a silicon-on-insulator waveguide for optical interconnect systems
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Proceedings Volume 5453, Micro-Optics, VCSELs, and Photonic Interconnects; (2004); doi: 10.1117/12.544947
Event: Photonics Europe, 2004, Strasbourg, France
Abstract
A SiGe/Si Modulation-Doped Multiple Quantum Well modulator, integrated in a rib waveguide is presented. Refractive index variation is achieved by depletion of free carriers initially present in the wells. Numerical simulations are used to design the modulator. An optimal structure is defined: it is formed by 3 SiGe QW, 10 nm-thick, and 4 Si P+ layers, 5 nm-thick. The predicted electrorefractive effect is 1.7.10-4 under a -6V bias voltage, and the associate absorption variation is 0.7 cm-1. Intensity modulation is obtained by including this active region inside an interferometer structure. Using resonant cavities of a few hundred of µm long, modulation depth of more than 60% is achieved with losses in the ON state below 12 dB. Mach-Zehnder interferometer of 3.8 mm-long leads to modulation depth of more than 95%, with losses in the ON state lower than 8 dB.
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Delphine Marris, Daniel Pascal, Alain Koster, Laurent Vivien, Eric Cassan, Suzanne Laval, "Design of a SiGe/Si quantum well optical modulator integrated in a silicon-on-insulator waveguide for optical interconnect systems", Proc. SPIE 5453, Micro-Optics, VCSELs, and Photonic Interconnects, (8 September 2004); doi: 10.1117/12.544947; http://dx.doi.org/10.1117/12.544947
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KEYWORDS
Silicon

Quantum wells

Modulation

Waveguides

Germanium

Modulators

Absorption

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