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8 September 2004 Integration of germanium waveguide photodetectors for optical intra-chip interconnects
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This paper presents the potential characteristics of germanium photodetectors integrated in silicon-on-insulator optical waveguides for intra-chip optical interconnects. Experimental results on the optical absorption, from 1.1 μm to 1.7 μm of Ge layers epitaxially grown on Si are reported, as well as the measured responsivity of an interdigited MSM Ge photodetector. Light coupling from a rib SOI waveguide to a Ge photodetector is studied for two possible configurations: butt coupling or Ge deposition on top of the waveguide. Comparisons between MSM and PIN Ge detectors are carried out by estimating the dark current, capacitance and time response.
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Mathieu Rouviere, Mathieu Halbwax, Jean-Luc Cercus, Eric Cassan, Laurent Vivien, Daniel Pascal, Michel Heitzmann, Jean-Michel Hartmann, Daniel Bouchier, and Suzanne Laval "Integration of germanium waveguide photodetectors for optical intra-chip interconnects", Proc. SPIE 5453, Micro-Optics, VCSELs, and Photonic Interconnects, (8 September 2004);

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