8 September 2004 Integration of germanium waveguide photodetectors for optical intra-chip interconnects
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Abstract
This paper presents the potential characteristics of germanium photodetectors integrated in silicon-on-insulator optical waveguides for intra-chip optical interconnects. Experimental results on the optical absorption, from 1.1 μm to 1.7 μm of Ge layers epitaxially grown on Si are reported, as well as the measured responsivity of an interdigited MSM Ge photodetector. Light coupling from a rib SOI waveguide to a Ge photodetector is studied for two possible configurations: butt coupling or Ge deposition on top of the waveguide. Comparisons between MSM and PIN Ge detectors are carried out by estimating the dark current, capacitance and time response.
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Mathieu Rouviere, Mathieu Rouviere, Mathieu Halbwax, Mathieu Halbwax, Jean-Luc Cercus, Jean-Luc Cercus, Eric Cassan, Eric Cassan, Laurent Vivien, Laurent Vivien, Daniel Pascal, Daniel Pascal, Michel Heitzmann, Michel Heitzmann, Jean-Michel Hartmann, Jean-Michel Hartmann, Daniel Bouchier, Daniel Bouchier, Suzanne Laval, Suzanne Laval, } "Integration of germanium waveguide photodetectors for optical intra-chip interconnects", Proc. SPIE 5453, Micro-Optics, VCSELs, and Photonic Interconnects, (8 September 2004); doi: 10.1117/12.544996; https://doi.org/10.1117/12.544996
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