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8 September 2004 High-density hybrid interconnect technologies
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The ultra-high density hybrid flip chip integration of an array of detectors and its dedicated readout electronics can be achieved with a variety of solder bump techniques such as pure Indium of Tin alloys, (In, Ni/PbSn), but also conducting polymers, etc. Particularly for cooled applications or ultra-high density applications, Indium solder bump technology (electroplated or evaporated) is the method of choice. The state-of-the-art of solder bump technologies that are to a high degree independent of the underlying detector material will be presented and examples of interconnect densities between 5e4/cm2 and 1e6/cm2 will be demonstrated. For several classes of detectors, flip-chip integration is not allowed since the detectors have to be illuminated from the top. This applies to image sensors for EUV applications such as GaN/AlGaN based detectors and to MEMS-based detectors. In such cases, the only viable interconnection method has to be through the (thinned) detector wafer followed by a based-based integration. The approaches for dense and ultra-dense through-the-wafer interconnect "vias" will be presented.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joachim John, Lars Zimmermann, Piet De Moor, Koen De Munck, Tom Borgers, and Chris Van Hoof "High-density hybrid interconnect technologies", Proc. SPIE 5454, Micro-Optics: Fabrication, Packaging, and Integration, (8 September 2004);


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