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16 August 2004 Compact triangulation distance sensor realized by wafer bending technique
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The triangulation distance sensor is constructed using the originally proposed wafer bending technique. Since the bending process is final in the fabrication sequence, the planer photolighography can be combined. On the Si wafer, the elements are pre-aligned at the unfolded planer condition. The position sensitive detector (PSD), mirror, and alignment pit for the collimation ball lens are prepared. The realized sensor substrate is 1.4mm in depth. Taking the advantage of the batch fabrication, 2x2 sensor array is prepared. The dynamic range of 4mm with ± 1% noise is confirmed.
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Minoru Sasaki, Satoshi Endou, and Kazuhiro Hane "Compact triangulation distance sensor realized by wafer bending technique", Proc. SPIE 5455, MEMS, MOEMS, and Micromachining, (16 August 2004);

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