16 August 2004 Modeling of microstrip lines on micromachined silicon substrates
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Abstract
In this paper, two matched microstrip line configurations for the excitation of magnetostatic wave resonators have been studied for optimizing the performances of a Magnetostatic Wave (MSW) Straight Edge Resonator (SER). The first transducer was designed for a band-stop and the second one for a band-pass resonator, both suspended on a silicon micromachined membrane obtained by means of wet anisotropic etching. It has been previously observed that the insertion losses of microstrip lines on silicon membrane for band-stop and band-pass MSW SERs are improved with respect to the same microstrip line structures realized on a silicon bulk substrate. For that reason the modelling of the microstrip lines has been optimized in view of their application in SER devices. The Microwave Office program, a powerful tool for the design of microwave planar devices, has been used. The theoretical S-parameters have been obtained and optimized by changing the geometry in the design of the transmission lines.
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Alina N. Cismaru, Alina N. Cismaru, Romolo Marcelli, Romolo Marcelli, George Sajin, George Sajin, Florea Craciunoiu, Florea Craciunoiu, } "Modeling of microstrip lines on micromachined silicon substrates", Proc. SPIE 5455, MEMS, MOEMS, and Micromachining, (16 August 2004); doi: 10.1117/12.545541; https://doi.org/10.1117/12.545541
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