16 August 2004 Piezoelectric actuation for application in RF-MEMS switches
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Abstract
RF-MEMS switches are commonly electrostatically actuated. This way of actuation has the advantage of technological simplicity. However the actuation voltage is relatively high. Piezoelectric actuation can have significantly lower actuation voltages, depending on the used materials and geometries. Analysis shows that clamped-free beams and clamped-clamped beams can have a reasonable deflection when aluminum nitride is used as the piezoelectric material. A five mask monolithic process has been developed for the realization of piezoelectrically actuated cantilevers and RF-MEMS switches. The complexity of this process is comparable with the complexity of the process for electrostatically actuated switches. Deflections of piezoelectrically actuated cantilever beams have been measured. Due to a high stress gradient in the beams, the assumptions that have been made in the analysis are not valid anymore. Finit element simulations were needed to verify the measurement data. The simulations fit with the measurements when the following values are taken for the properties of the aluminum nitrde film: Young's modulus Ep = 320 GPa and piezoelectric coefficient d31 = -3.2 pC/N.
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Gerard Klaasse, Gerard Klaasse, Bob Puers, Bob Puers, Harrie A. C. Tilmans, Harrie A. C. Tilmans, } "Piezoelectric actuation for application in RF-MEMS switches", Proc. SPIE 5455, MEMS, MOEMS, and Micromachining, (16 August 2004); doi: 10.1117/12.545687; https://doi.org/10.1117/12.545687
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