Paper
1 September 2004 80-mJ/1.64-μm pulsed Er:Yb:YAG diode-pumped laser
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Abstract
Efficient lasing at 1.645mm of bulk diode-pumped Er3+:Yb3+:YAG is demonstrated. The material is transversely pumped using three quasi-cw 960-nm laser-diode arrays in a simple arrangement. In free-running mode of operation, output pulse energy of 79mJ is obtained at 4.7J of incident optical pump energy. Lasing threshold lies in the range of 1.0-1.9J in long-pulse operation, depending on pumping conditions, while optical slope efficiencies of 2.2-3.4% were measured with respect to the incident pump energy. Furthermore, initial Q-switching experiments with a Co:MALO saturable absorber yielded pulses of 1.7mJ energy and 340ns FWHM duration. As the reported laser setup is also characterized by an uncomplicated and compact design, it represents a good crystalline rare-earth candidate system with superior material qualities to compete against the established glass-host materials in the eyesafe wavelength range.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Efstratios Georgiou, Foteini Kiriakidi, Olivier Musset, and Jean-Pierre Boquillon "80-mJ/1.64-μm pulsed Er:Yb:YAG diode-pumped laser", Proc. SPIE 5460, Solid State Lasers and Amplifiers, (1 September 2004); https://doi.org/10.1117/12.545226
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconductor lasers

Laser crystals

Crystals

Pulsed laser operation

Absorption

Erbium

Diodes

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