Translator Disclaimer
8 September 2004 Realization of organic pn-homojunction using a novel n-type doping technique
Author Affiliations +
We present a novel n-type doping technique for organic semiconductors using the metal complex bis(terpyridine)ruthenium as a strong donor. Owing to its low oxidation potential, the reduced neutral form of the donor complex allows an electron transfer to the matrix. This enables n-type conduction that has been seldom reported in metallophthalocyanine systems doped with organic compounds. The n-type zinc-phthalocyanine layers are characterized by the conductivity and the field-effect measurements. By sequential coevaporation of p- and n-doped layers, we have prepared the first stable and reproducible organic homojunction of zinc-phthalocyanine. The diode exhibits surprisingly high built-in voltage attractive e.g. for organic solar cell applications. The temperature dependence of the current-voltage characteristics does not follow the standard Shockley theory of pn-junctions. We explain the behavior of the ideality factor and the saturation current by deviations from the classical Einstein relation at low temperatures.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kentaro Harada, Ansgar G. Werner, Martin Pfeiffer, Corey J. Bloom, C. Michael Elliott, and Karl Leo "Realization of organic pn-homojunction using a novel n-type doping technique", Proc. SPIE 5464, Organic Optoelectronics and Photonics, (8 September 2004);

Back to Top