Paper
25 May 2004 Dependence of Hooge constant on mean free paths of materials
Munecazu Tacano, Jan Pavelka, Nobuhisa Tanuma, Saburo Yokokura, Sumihisa Hashiguchi
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Proceedings Volume 5469, Fluctuations and Noise in Materials; (2004) https://doi.org/10.1117/12.547202
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain
Abstract
The Hooge parameters of compound semiconductors are found to be in inverse proportional to the mean free paths of materials. The newly developed model of 1/f phonon energy partition fluctuation in thermal equilibrium predicts the value of Hooge parameter as αH = a/λ, the ratio of the lattice constant a and the mean free path λ. Several reported experimental results on αH for very pure semiconductors are found on the a/λ line. Experimental verification is given by measuring noise in InGaAs/InAlAs heterostructure, where optical phonon effects can be observed due to negligible impurity scattering. The Hooge parameter of about 1 in p-InGaAs and 10-3 to 10-5 in n-InGaAs reflects the two order difference in the mobility and corresponding λ values.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Munecazu Tacano, Jan Pavelka, Nobuhisa Tanuma, Saburo Yokokura, and Sumihisa Hashiguchi "Dependence of Hooge constant on mean free paths of materials", Proc. SPIE 5469, Fluctuations and Noise in Materials, (25 May 2004); https://doi.org/10.1117/12.547202
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Cited by 2 scholarly publications.
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KEYWORDS
Scattering

Temperature metrology

Phonons

Heterojunctions

Gallium

Statistical modeling

Compound semiconductors

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