Resistance noise scaling in a dilute two-dimensional hole system in GaAs

Renaud Leturcq; Gerard Deville; Denis L'Hote; Roland Tourbot; Christopher J Mellor; Mohamed Henini

doi:10.1117/12.546505

25 May 2004 Resistance noise scaling in a dilute two-dimensional hole system in GaAs

Renaud Leturcq, Gerard Deville, Denis L'Hote, Roland Tourbot, Christopher J Mellor, Mohamed Henini

Proceedings Volume 5469, Fluctuations and Noise in Materials; (2004) https://doi.org/10.1117/12.546505
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

The 1/f resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well has been measured on both sides of the 2D metal-insulator transition (MIT) at zero magnetic field (B = 0), and deep in the insulating regime. The two measurement methods used are described: I or V fixed, and measurement of resp. Vor I fluctuations. The normalized noise magnitude S_R/R² increases strongly when the hole density is decreased, and its temperature (T) dependence goes from a slight increase with T at the largest densities, to a strong decrease at low density. We find that the noise magnitude scales with the resistance, S_R/R² ~ R^2.4. Such a scaling is expected for a second order phase transition or a percolation transition. The possible presence of such a transition is investigated by studying the dependence of the conductivity as a function of the density. This dependence is consistent with a critical behavior close to a critical density p* lower than the usual MIT critical density p_c.

Citation Download Citation

Renaud Leturcq, Gerard Deville, Denis L'Hote, Roland Tourbot, Christopher J Mellor, and Mohamed Henini "Resistance noise scaling in a dilute two-dimensional hole system in GaAs", Proc. SPIE 5469, Fluctuations and Noise in Materials, (25 May 2004); https://doi.org/10.1117/12.546505

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