25 May 2004 1/f noise in GaN/AlGaN heterostructure field effect transistors under condition of strong geometric magnetoresistance
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Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.546748
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain
Abstract
The I-V characteristics of GaN/AlGaN HFET and 1/f noise at 4K have been measured in strong magnetic fields, where the electron mobility is affected by geometric magnetoresistance. The magnetic field dependence of the 1/f noise shows that the number of electrons fluctuations is the dominant mechanism of the 1/f noise and precludes the mobility fluctuations mechanism. The channel mobility extracted from the magnetoresistance data first increases with gate bias reaching the maximum value of ~(0.9-1.0) m2/Vs at the 2D electron concentration of 5x1012 cm-2. This maximum value is close to the estimated ballistic mobility limit of 1.2 m2/Vs determined by the electron transit time with the Fermi velocity.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey L. Rumyantsev, Sergey L. Rumyantsev, Michael Shur, Michael Shur, Wojciech Knap, Wojciech Knap, Nina Dyakonova, Nina Dyakonova, Fabien Pascal, Fabien Pascal, Alain Hoffman, Alain Hoffman, Y. Ghuel, Y. Ghuel, C. Gaquiere, C. Gaquiere, D. Theron, D. Theron, } "1/f noise in GaN/AlGaN heterostructure field effect transistors under condition of strong geometric magnetoresistance", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546748; https://doi.org/10.1117/12.546748
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