25 May 2004 Analysis of low frequency noise in GaN based HEMT technologies
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Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.547061
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain
Abstract
In this paper, we present some results on low frequency noise of GaN HEMTs grown either on sapphire, SiC or Si. The evolution of LF drain and gate current noise is analysed in ohmic and saturation regime. Devices on sapphire grown either by MOCVD or by MBE present αH value in ohmic regime as low as 10-4, whereas for devices grown by MOCVD on SiC, αH extends from 5x10-4 to 10-2. Low frequency gate current noise and coherence function have been measured to discuss possible correlation between drain and gate current noise. Devices with high reverse gate current exhibit high gate current noise. The coherence function increases when the Ig/Id ratio becomes higher than 10-5 which results in increase of the drain current noise due to contribution of gate current fluctuations.
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Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, André Touboul, "Analysis of low frequency noise in GaN based HEMT technologies", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.547061; https://doi.org/10.1117/12.547061
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