Base low-frequency noise analysis of InP/InGaAs/InP DHBT submitted to bias and thermal stresses

Cristell Maneux; Jean-Christophe Martin; Nathalie Labat; André Touboul

doi:10.1117/12.547056

25 May 2004 Base low-frequency noise analysis of InP/InGaAs/InP DHBT submitted to bias and thermal stresses

Cristell Maneux, Jean-Christophe Martin, Nathalie Labat, André Touboul

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.547056
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

This paper presents results of ageing tests performed on InP/InGaAs DHBT on InP substrate. An extrinsic current path between measurement pads is shown to be responsible for leakage current evolution. The analysis of low frequency base current noise is used to identify pre-eminent noise sources and evaluate the stability of intrinsic HBT.

Citation Download Citation

Cristell Maneux, Jean-Christophe Martin, Nathalie Labat, and André Touboul "Base low-frequency noise analysis of InP/InGaAs/InP DHBT submitted to bias and thermal stresses", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.547056

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