Current noise in semiconductor nanoscale devices

Tanroku Miyoshi; Hideaki Tsuchiya; Matsuto Ogawa; Akihiko Asanuma; Toshitaka Okauchi

doi:10.1117/12.546659

25 May 2004 Current noise in semiconductor nanoscale devices

Tanroku Miyoshi, Hideaki Tsuchiya, Matsuto Ogawa, Akihiko Asanuma, Toshitaka Okauchi

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.546659
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

We discuss the current noise characteristics of nano-scale devices by employing the quantum transport models based upon the nonequilibrium Green's function model (NEGF) and the Monte Carlo (MC) device simulation. In this paper the NEGF is used to study the shot noise suppression caused by the quantum mechanical correlations of electrons in semiconductor nano-scale devices, so that the current noise is discussed at low temperature. On the other hand, the quantum corrected MC model is developed to simulate practical semiconductor devices at normal temperatures, and the current noise spectral density of a nano-scale Si-MOSFET structure is presented.

Citation Download Citation

Tanroku Miyoshi, Hideaki Tsuchiya, Matsuto Ogawa, Akihiko Asanuma, and Toshitaka Okauchi "Current noise in semiconductor nanoscale devices", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.546659

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