25 May 2004 Current noise in semiconductor nanoscale devices
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Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.546659
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain
Abstract
We discuss the current noise characteristics of nano-scale devices by employing the quantum transport models based upon the nonequilibrium Green's function model (NEGF) and the Monte Carlo (MC) device simulation. In this paper the NEGF is used to study the shot noise suppression caused by the quantum mechanical correlations of electrons in semiconductor nano-scale devices, so that the current noise is discussed at low temperature. On the other hand, the quantum corrected MC model is developed to simulate practical semiconductor devices at normal temperatures, and the current noise spectral density of a nano-scale Si-MOSFET structure is presented.
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Tanroku Miyoshi, Tanroku Miyoshi, Hideaki Tsuchiya, Hideaki Tsuchiya, Matsuto Ogawa, Matsuto Ogawa, Akihiko Asanuma, Akihiko Asanuma, Toshitaka Okauchi, Toshitaka Okauchi, } "Current noise in semiconductor nanoscale devices", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546659; https://doi.org/10.1117/12.546659
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